MGF4714CP |
RFQ for MGF4714CP Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| MGF4714CP | - | DO-4 | - |
The MGF4714CP low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a configuration suitable for microstrip circuits.
The MGF4714CP is mounted in Super 12 tape.
Typical Application |
Features |
| ·L to Ku band low noise amplifiers. | • Low noise figure NFmin.=1.00dB(MAX.) @f=12GHz• High associated gain Gs=11.0dB(MIN.) @f=12GHz |
| Parameter |
Symbol |
Ratings |
Unit |
| Gate to drain voltage |
VGDO |
-4 |
V |
| Gate to source voltage |
VGSO |
-4 |
V |
| Drain current |
ID |
60 |
mA |
| Total power dissipation *1 |
PT |
50 |
mW |
| Channel temperature |
Tch |
125 |
°C |
| Storage temperature |
Tstg |
65 /+125 |
°C |
